?2013 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA30N65SMD rev. c2 FGA30N65SMD 650 v, 30 a field stop igbt july 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature symbol description ratings unit v ces collector to emitter voltage 650 v v ges gate to emitter voltage ? 20 v transient gate to emitter voltage ? 30 v i c collector current @ t c = 25 o c60 a collector current @ t c = 100 o c30 a i cm (1) pulsed collector current 90 a i f diode forward current @ t c = 25 o c40 a diode forward current @ t c = 100 o c20 a i fm (1) pulsed diode maximum forward current 120 a p d maximum power dissipation @ t c = 25 o c300 w maximum power dissipation @ t c = 100 o c150 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c g e c ge c to-3pn FGA30N65SMD 650 v, 30 a field stop igbt features ? maximum junction temperature : t j =175 o c ? positive temperature co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) =1.98 v(typ.) @ i c = 30 a ? fast switching ? tighten parameter distribution ?rohs compliant applications ? solar inverter, ups, welder, pfc, induction heating ? telecom, ess general description using novel field stop igbt technology, fairchild ? ?s new series of field stop 2 nd generation igbts offer the optimum perfor- mance for solar inverter, ups, welder, induction heating, tele- com, ess and pfc applications where low conduction and switching losses are essential.
FGA30N65SMD 650 v, 30 a field stop igbt ?2013 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA30N65SMD rev. c2 thermal characteristics package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0.5 o c / w r ? jc (diode) thermal resistance, junction to case - 1.5 o c / w r ? ja thermal resistance, junction to ambient - 40 o c / w device marking device package re el size tape width quantity FGA30N65SMD FGA30N65SMD to-3pn - - 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 650 - - v ? bv ces ????? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ? a -0.29-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 ? a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ? a, v ce = v ge 3.5 4.8 6.0 v v ce(sat) collector to emitter saturation voltage i c = 30a , v ge = 15v -1.982.5 v i c = 30a , v ge = 15v, t c = 175 o c -2.29- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1350 - pf c oes output capacitance - 130 - pf c res reverse transfer capacitance - 45 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 30a, r g = 6 ? , v ge = 15v, inductive load, t c = 25 o c -14- ns t r rise time - 28 - ns t d(off) turn-off delay time - 102 - ns t f fall time - 10 - ns e on turn-on switching loss - 716 - uj e off turn-off switching loss - 208 - uj e ts total switching loss - 924 - uj t d(on) turn-on delay time v cc = 400v, i c = 30a, r g = 6 ? , v ge = 15v, inductive load, t c = 175 o c -13- ns t r rise time - 28 - ns t d(off) turn-off delay time - 108 - ns t f fall time - 17 - ns e on turn-on switching loss - 1125 - uj e off turn-off switching loss - 572 - uj e ts total switching loss - 1697 - uj
FGA30N65SMD 650 v, 30 a field stop igbt ?2013 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA30N65SMD rev. c2 electrical characteristi cs of the igbt (continued) electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit q g total gate charge v ce = 400v, i c = 30a, v ge = 15v -87-nc q ge gate to emitter charge - 9.1 - nc q gc gate to collector charge - 45 - nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 20a t c = 25 o c- 2.1 2.6 v t c = 175 o c - 1.83 - e rec reverse recovery energy i f =20a, di f /dt = 200a/ ? s t c = 175 o c- 55 - uj t rr diode reverse recovery time t c = 25 o c- 35 - ns t c = 175 o c - 182 - q rr diode reverse recovery charge t c = 25 o c- 59 - nc t c = 175 o c - 587 -
FGA30N65SMD 650 v, 30 a field stop igbt ?2013 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA30N65SMD rev. c2 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 0.01.02.03.04.05.06.0 0 15 30 45 60 75 90 v ge = 8v 10v 20v t c = 25 o c 15v 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0.01.02.03.04.05.06.0 0 15 30 45 60 75 90 20v t c = 175 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.01.02.03.04.05.0 0 15 30 45 60 75 90 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 024681012 0 15 30 45 60 75 90 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 4 8 12 16 20 0 5 10 15 20 i c = 15a 30a 60a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 60a 30a i c = 15a common emitter v ge = 15v collector-emitter voltage, v ce [v] case temperature, t c [ o c]
FGA30N65SMD 650 v, 30 a field stop igbt ?2013 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA30N65SMD rev. c2 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resistance 4 8 12 16 20 0 5 10 15 20 i c = 15a 30a 60a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 30a 15a 60a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 5 1015202530 20 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 0255075100 0 3 6 9 12 15 common emitter t c = 25 o c 300v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 1ms 10ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 3 10 100 common emitter v cc = 400v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ]
FGA30N65SMD 650 v, 30 a field stop igbt ?2013 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA30N65SMD rev. c2 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistanc e figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 1020304050 1 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 10 20 30 40 50 60 70 80 1 10 100 500 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 10 20 30 40 50 60 70 80 1 10 100 500 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c t f t d(off) switching time [ns] collector current, i c [a] 0 1020304050 10 100 1000 10000 common emitter v cc = 400v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c e on e off switching loss [uj] gate resistance, r g [ ? ] 10 20 30 40 1 10 100 1000 10000 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c e on e off switching loss [uj] collector current, i c [a] 1 10 100 1000 0.1 1 10 100 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
FGA30N65SMD 650 v, 30 a field stop igbt ?2013 fairchild semiconductor corporation 7 www.fairchildsemi.com FGA30N65SMD rev. c2 typical performance characteristics figure 19. current derating figure 20. power dissipation figure 21. load current vs. frequency figure 22. forward characteristics figure 23. reverse current figure 24. reverse recovery current 25 50 75 100 125 150 175 0 20 40 60 80 common emitter v ge = 15v collector current, i c [a] case temperature, t c [ o c] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 common emitter v ge = 15v power dissipation, p d [w] case temperature, t c [ o c] 01234 0.1 1 10 60 t j = 100 o c t j = 175 o c t j = 25 o c forward voltage, v f [v] forward current, i f [a] 1k 10k 100k 1m 0 50 100 150 200 250 300 350 square wave t j < 175 o c, d = 0.5, v ce = 400v v ge = 15/0v, r g = 6 ? t c = 75 o c t c = 25 o c t c = 100 o c collector current, i c a] switchin g fre q uenc y, f [ hz ] 50 200 400 600 0.01 0.1 1 10 100 1000 reverse current , i r [ ? a] reverse voltage, v r [v] t j = 175 o c t j = 25 o c t j = 100 o c 5 10152025303540 0 2 4 6 8 di/dt = 200a/ ? s t c = 25 o c t c = 175 o c reverse recovery currnet, i rr [a] forward current, i f [a] di/dt = 100a/ ? s
FGA30N65SMD 650 v, 30 a field stop igbt ?2013 fairchild semiconductor corporation 8 www.fairchildsemi.com FGA30N65SMD rev. c2 typical performance characteristics figure 25. stored charge figure 26. reverse recovery time figure 27.transient thermal impedance of igbt figure 28.transient thermal impedance of diode 5 10152025303540 0 200 400 600 800 di/dt = 200a/ ? s t c = 25 o c t c = 175 o c di/dt = 100a/ ? s stored recovery charge, q rr [nc] forwad current, i f [a] 5 10152025303540 0 50 100 150 200 250 300 di/dt = 200a/ ? s t c = 25 o c t c = 175 o c di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 1 0.003 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 1e-5 1e-4 1e-3 0.01 0.1 1 0.01 0.1 1 2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGA30N65SMD 650 v, 30 a field stop igbt ?2013 fairchild semiconductor corporation 9 www.fairchildsemi.com FGA30N65SMD rev. c2 mechanical dimensions to-3pn package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semicon ductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and condition s, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online pac kaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt3po-003 to-3p 3l - 3ld,to3,plastic,eiaj sc-65 (active)
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